INVENTO 10Pcs 2N5551 BJT Bipolar Single Transistor, NPN, 160 V, 150 MHz, 625 mW, 600 mA, 80 hFE

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INVENTO 10Pcs 2N5551 BJT Bipolar Single Transistor, NPN, 160 V, 150 MHz, 625 mW, 600 mA, 80 hFE