Fundamentals of Silicon Carbide Technology: Growth, Characterization, Devices and Applications (IEEE Press)

satisfied, A+

A+++++++++++

excellent overview of SiC technology

Reviewed by Dennis Feucht on April 23, 2015Format: HardcoverWhile this book emphasizes the newer semiconductor materials, SiC and also GaN, that show performance capabilities well beyond that of Si, it also has good coverage of semiconductor electronics generally, beginning with crystal structure, through solid-state physics, device processes and processing, to circuit models and applications. The scope of coverage is comprehensive, and though the first half of the book will be of more interest to manufacturing process engineers, the last half relates better to circuit designers.About halfway through the book, solid-state electronics at a graduate level appears and includes essentially every kind of semiconductor device. It looks quite familiar to those who know silicon, but some of the values of variables are astounding, like blocking voltages up to 50 kV. And SiC MOSFET on-resistance is vastly reduced, “almost 1000 times lower”.To read more of my thoughts on this book, please see my complete review in How2Power Today on the How2Power website in the .com domain.